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NTHS4101P
Power MOSFET
? 20 V, 6.7 A, P ? Channel ChipFET t
Features
? Offers an Ultra Low R DS(on) Solution in the ChipFET Package
? Miniature ChipFET Package 40% Smaller Footprint than TSOP ? 6
making it an Ideal Device for Applications where Board Space is at a
http://onsemi.com
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Premium
Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin
Environments such as Portable Electronics
Designed to Provide Low R DS(on) at Gate Voltage as Low as 1.8 V, the
Operating Voltage used in many Logic ICs in Portable Electronics
Simplifies Circuit Design since Additional Boost Circuits for Gate
Voltages are not Required
Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels using the same Basic Topology
Pb ? Free Package is Available
V (BR)DSS
? 20 V
G
R DS(on) TYP
21 m W @ ? 4.5 V
30 m W @ ? 2.5 V
42 m W @ ? 1.8 V
S
I D MAX
? 6.7 A
8
Applications
? Optimized for Battery and Load Management Applications in
Portable Equipment such as MP3 Players, Cell Phones, Digital
Cameras, Personal Digital Assistant and other Portable Applications
? Charge Control in Battery Chargers
? Buck and Boost Converters
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
D
P ? Channel MOSFET
ChipFET
CASE 1206A
STYLE 1
Rating
Symbol
Value
Unit
1
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
V DSS
V GS
? 20
" 8.0
Vdc
Vdc
PIN
CONNECTIONS
MARKING
DIAGRAM
Drain Current ? Continuous
? 5 seconds
Total Power Dissipation
Continuous @ T A = 25 ° C
(5 sec) @ T A = 25 ° C
Continuous @ 85 ° C
(5 sec) @ 85 ° C
I D
I D
P D
? 4.8
? 6.7
1.3
2.5
0.7
1.3
A
W
D
D
D
S
8
7
6
5
1
2
3
4
D
D
D
G
1
2
3
4
8
7
6
5
Pulsed Drain Current ? t p = 10 m s
Operating Junction and Storage
Temperature Range
I DM
T J , T STG
? 190
? 55 to
+150
A
° C
C6 = Specific Device Code
M = Month Code
G = Pb ? Free Package
NTHS4101PT1G
3000 Tape / Reel
Continuous Source Current Is ? 4.8 A
Thermal Resistance (Note 1) ° C/W
Junction ? to ? Ambient, 5 sec R q JA 50
Junction ? to ? Ambient, Continuous R q JA 95
Maximum Lead Temperature for Soldering T L 260 ° C
Purposes, 1/8 ″ from case for 10 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq
[1 oz] including traces).
ORDERING INFORMATION
Device Package Shipping ?
NTHS4101PT1 ChipFET 3000 Tape / Reel
ChipFET
(Pb ? free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
March, 2012 ? Rev. 4
1
Publication Order Number:
NTHS4101P/D
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